GM71CS17800C-7 查看數據表（PDF） - Hynix Semiconductor

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GM71CS17800C-7

CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns

Hynix Semiconductor 

Read- Modify-Write Cycle

Symbol

Parameter

tRWC

tRWD

tCWD

tAWD

tOEH

Read-Modify-Write Cycle Time

RAS to WE Delay Time

CAS to WE Delay Time

Column Address to WE Delay Time

OE Hold Time from WE

GM71C17800C

GM71CS17800CL

GM71C(S)17800 GM71C(S)17800 GM71C(S)17800

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

131 - 155 - 181 -

ns

73 - 85 - 98 -

ns

36 - 40 - 46 -

ns

48 - 55 - 63 -

ns

13 - 15 - 18 -

ns

Note

14

14

14

Refresh Cycle

Symbol

Parameter

tCSR

CAS Setup Time

(CAS-before-RAS Refresh Cycle)

tCHR CAS Hold Time

(CAS-before-RAS Refresh Cycle)

tWRP WE Setup Time

(CAS-before-RAS Refresh Cycle)

tWRH WE Hold Time

(CAS-before-RAS Refresh Cycle)

tRPC

RAS Precharge to CAS Hold Time

GM71C(S)17800 GM71C(S)17800 GM71C(S)17800

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

Note

5 - 5 - 5 - ns

10 - 10 - 10 - ns

0 - 0 - 0 - ns

7 - 10 - 10 - ns

5 - 5 - 5 - ns

Fast Page Mode Cycle

Symbol

Parameter

tPC

tRASP

tACP

tRHCP

Fast Page Mode Cycle Time

Fast Page Mode RAS Pulse Width

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

GM71C(S)17800 GM71C(S)17800 GM71C(S)17800

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

35 - 40 - 45 - ns

- 100,000 - 100,000 - 100,000 ns

- 30 - 35 - 40 ns

30 - 35 - 40 - ns

Note

16

9,17

Rev 0.1 / Apr’01

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