GM71CS17800CT-6 查看數據表（PDF） - Hynix Semiconductor

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GM71CS17800CT-6

CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns

Hynix Semiconductor 

GM71C17800C

GM71CS17800CL

Fast Page Mode Read-Modify-Write Cycle

Symbol

Parameter

GM71C(S)17800 GM71C(S)17800 GM71C(S)17800

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

tPRWC

tCPW

Fast Page Mode Read-Modify-Write

Cycle Time

WE Delay Time from CAS Precharge

76 - 85 - 96 -

ns

53 - 60 - 68 -

ns

Note

14

Self Refresh Mode ( L-version )

Symbol

Parameter

tRASS

tRPS

tCHS

RAS Pulse Width ( Self-refresh )

RAS Precharge Time ( Self-refresh )

CAS Hold Time ( Self-refresh )

GM71CS17800 GM71CS17800 GM71CS17800

CL-5

CL-6

CL-7

Min Max Min Max Min Max

Unit

100 - 100 - 100 -

µs

90 - 110 - 130 -

ns

-50 - -50 - -50 -

ns

Note

Rev 0.1 / Apr’01

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