TLMB 查看數據表（PDF） - Vishay Semiconductors
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TLMB Datasheet PDF : 11 Pages
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Soft Orange
TLMO2100
Parameter
Test condition
Luminous intensity 2)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 µA
VR = 0, f = 1 MHz
2) in one Packing Unit IVmax/IVmin ≤ 2.0
Yellow
TLMY2100
Parameter
Test condition
Luminous intensity 2)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 20 mA
IR = 10 µA
VR = 0, f = 1 MHz
2) in one Packing Unit IVmax/IVmin ≤ 2.0
Green
TLMG2100
Parameter
Test condition
Luminous intensity 2)
IF = 10 mA
Dominant wavelength
IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity
IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 µA
Junction capacitance
VR = 0, f = 1 MHz
2) in one Packing Unit IVmax/IVmin ≤ 2.0
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Symbol
Min
Typ.
Max
Unit
IV
3.2
7.5
mcd
λd
598
605
611
nm
λp
605
nm
ϕ
± 60
deg
VF
2.1
3
V
VR
6
15
V
Cj
15
pF
Symbol
Min
Typ.
Max
Unit
IV
3.2
7.5
mcd
λd
581
588
594
nm
λp
585
nm
ϕ
± 60
deg
VF
2.2
3
V
VR
6
15
V
Cj
15
pF
Symbol
Min
Typ.
Max
Unit
IV
6.3
10
mcd
λd
562
568
575
nm
λp
565
nm
ϕ
± 60
deg
VF
2.2
3.0
V
VR
6
15
V
Cj
15
pF
Document Number 83199
Rev. 1.6, 20-Jan-05
www.vishay.com
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