TLN108 查看數據表（PDF） - Toshiba
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TLN108 Datasheet PDF : 5 Pages
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TLN108(F)
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Pulse forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
VF
VFP
IR
IE
PO
CT
λP
Δλ
θ1
2
Test Condition
IF = 50 mA
IFP = 1 A
VR = 5 V
IF = 50 mA
IF = 50 mA
VR = 0, f = 1 MHz
IF = 50 mA
IF = 50 mA
IF = 50 mA
Min Typ. Max Unit
―
1.3
1.4
V
―
2.4
―
V
―
―
10
μA
10
20
― mW / sr
―
3
―
mW
―
30
―
pF
―
940
―
nm
―
50
―
nm
―
±8
―
°
Precautions
Please be careful of the followings.
1. Soldering temperature: 260°C max
Soldering time: 5s max
(Soldering must be performed 1.5m from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
IE (t) = PO (t)
IE (0) PO (0)
2
2007-10-01
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