TLP168J 查看數據表（PDF） - Toshiba
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TLP168J Datasheet PDF : 6 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP168J
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta ≥ 25°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 25°C)
IF
ΔIF / °C
IFP
VR
PD
ΔPD /°C
20
mA
-0.2
mA / °C
1
A
5
V
100
mW
-1.0
mW/°C
Junction temperature
Tj
125
°C
Off−state output terminal voltage
VDRM
600
V
On-state RMS current
Ta = 25°C
70
IT(RMS)
mA
Ta = 70°C
40
On-state current derating (Ta ≥ 25°C)
Peak on−state current
(100 μs pulse, 120 pps)
ΔIT / °C
ITP
-0.67
2
mA / °C
A
Peak non-repetitive surge current
(PW=10 ms)
Output power dissipation
Output power dissipation derating (Ta ≥
25°C)
ITSM
PO
ΔPO / °C
1.2
A
200
mW
-2.0
mW / °C
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage
(AC, 60 s, R.H. ≤ 60 %)
(Note 1)
Tj
Tstg
Topr
Tsol
BVS
115
-55 to 125
-40 to 100
260
2500
°C
°C
°C
°C
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc.).
Note 1: Device considered a two-terminal device: Pins 1 and 3 shorted together and Pin 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Peak on−state current
Operating temperature
VAC
―
―
240 Vac
IF
4.5
6
7.5 mA
ITP
―
―
1
A
Topr
-10
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-10
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