TLP521-1GBF 查看數據表（PDF） - Toshiba

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TLP521-1GBF

Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

TLP521−1,TLP521−2,TLP521−4

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Capacitance

Collector−emitter

breakdown voltage

Emitter−collector

breakdown voltage

Collector dark current

Capacitance

(collector to emitter)

Symbol

Test Condition

VF

IF = 10 mA

IR

VR = 5 V

CT

V = 0, f = 1 MHz

V(BR) CEO IC = 0.5 mA

V(BR) ECO IE = 0.1 mA

ICEO

CCE

VCE = 24 V

VCE = 24 V, Ta = 85°C

V = 0, f = 1 MHz

Min Typ. Max Unit

1.0 1.15 1.3

V

—

—

10

μA

—

30

—

pF

55

—

—

V

7

—

—

V

—

10 100 nA

—

2

50

μA

—

10

—

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Saturated CTR

Collector−emitter

saturation voltage

Symbol

Test Condition

IC / IF

IF = 5 mA, VCE = 5 V

Rank GB

IC / IF (sat)

IF = 1 mA, VCE = 0.4 V

Rank GB

VCE (sat)

IC = 2.4 mA, IF = 8 mA

IC = 0.2 mA, IF = 1 mA

Rank GB

MIn Typ. Max Unit

50

—

600

%

100

—

600

—

60

—

%

30

—

—

—

—

0.4

—

0.2

—

V

—

—

0.4

Isolation Characteristics (Ta = 25°C)

Characteristic

Capacitance

(input to output)

Isolation resistance

Isolation voltage

Symbol

Test Condition

CS

VS = 0, f = 1 MHz

RS

VS = 500 V, R.H.≤ 60%

AC, 1 minute

BVS

AC, 1 second, in oil

DC, 1 minute, in oil

Min Typ. Max Unit

—

0.8

—

pF

—

1011

—

Ω

2500 —

—

Vrms

— 5000 —

— 5000 — Vdc

4

2007-10-01

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