TLP523-4(2019) 查看數據表（PDF） - Toshiba

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TLP523-4
(Rev.:2019)

TOSHIBA Photocoupler IRED & Photo-Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

TLP523,TLP523-2,TLP523-4

Characteristics

Symbol

Test Condition

Min Typ. Max Unit

Forward voltage

VF

IF = 10 mA

1.0 1.15 1.3

V

Reverse current

IR

VR = 5 V

—

—

10

μA

Capacitance

CT

V = 0 V, f = 1 MHz

—

30

—

pF

Collector-emitter breakdown voltage V(BR) CEO IC = 1 mA

55

—

—

V

Collector dark current

ICEO

IF = 0 mA, VCE = 24 V

—

IF = 0 mA, VCE = 24 V, Ta = 85 °C —

10 200 nA

0.5

10

μA

Capacitance collector to emitter

CCE

V = 0 V, f = 1 MHz

—

10

—

pF

Current transfer ratio

IC/IF

IF = 1 mA, VCE = 1 V

500 2000 —

%

Collector-emitter saturation voltage

VCE(sat) IC = 50 mA, IF = 10 mA

—

—

1

V

Capacitance input to output

Isolation resistance

CS

VS = 0 V, f = 1 MHz

RS

VS = 500 V, R.H.≤ 60 %

—

0.8

—

pF

5×1010 1014

—

Ω

Switching Characteristics (Ta = 25°C)

Characteristics

Turn-on time

Turn-off time

Symbol

Test Condition

Min Typ. Max Unit

tON

VCC = 10 V, RL = 180 Ω (Fig. 1) —

3

—

μs

tOFF

IF = 16 mA

—

80

—

μs

Fig. 1: Switching Time Test Circuit

IF

IF

RL

VCC

VCE

IF

VCE

tOFF

9V

1V

tON

© 2019

4

Toshiba Electronic Devices & Storage Corporation

2019-06-24

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