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TLP561G(2002) 查看數據表(PDF) - Toshiba

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TLP561G Datasheet PDF : 6 Pages
1 2 3 4 5 6
TLP561G
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak offstate current
Peak onstate voltage
Holding current
Critical rate of rise of
offstate voltage
Critical rate or rise of
commutating voltage
Symbol
Test Condition
Min.
VF
IR
CT
IDRM
VTM
IH
dv / dt
dv / dt (c)
IF = 10mA
1.0
VR = 5V
V = 0, f = 1MHz
VDRM = 400V
ITM = 100mA
Vin = 120Vrms, Ta = 85°C (Fig.1) 200
Vin = 30Vrms, IT = 15mA
(Fig.1)
Typ.
1.15
30
10
1.7
0.6
500
0.2
Max. Unit
1.3
V
10
μA
pF
100 nA
3.0
V
mA
V / μs
V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance
(input to output)
Isolation resistance
Isolation voltage
Fig.1: dv / dt test circuit
Symbol
IFT
VIH
IIH
CS
RS
BVS
Test Condition
VT = 3V, RL = 100
IF = rated IFT
IF = rated IFT
VT = rated VDRM
VS = 0, f = 1MHz
VS = 500V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
5
10
mA
40
V
100 300 μA
0.8
pF
5×1010 1014
2500
Vrms
5000
5000
Vdc
Rin
Vin
+
1
6
VCC
120
2
RL
3
4
4k
dv / dt
(
5V, VCC
0V
dv / dt
3
2002-09-25

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