TLP571 查看數據表（PDF） - Toshiba
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TLP571 Datasheet PDF : 8 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Reverse current
Capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
(TLP571)
Emitter-base breakdown voltage
(TLP571)
Collector dark current
Collector dark current (TLP571)
Collector dark current (TLP571)
DC forward current gain (TLP571)
Capacitance (collector to emitter)
VF
IR
CT
V(BR)CEO
V(BR)ECO
V(BR)CBO
V(BR)EBO
ICEO
ICER
ICBO
hFE
CCE
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
IC = 1 mA
IE = 0.1 mA
IC = 0.1 mA
IE = 0.1 mA
VCE = 24 V
VCE = 24 V, Ta = 85 °C
VCE = 24 V, Ta = 85 °C
RBE = 10 MΩ
VCB = 10 V
VCE = 5 V, IC = 10 mA
V = 0 V, f = 1 MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo-current (TLP571)
Collector-emitter saturation voltage
Symbol
Test Condition
IC / IF
IC / IF (sat)
IPB
VCE (sat)
IF = 1 mA, VCE = 1 V
IF = 10 mA, VCE = 1 V
IF = 1 mA, VCB = 1 V
IC = 10 mA, IF = 1 mA
IC = 100 mA, IF = 10 mA
TLP570,TLP571
Min Typ. Max Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
35
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 200 nA
―
―
300
μA
―
0.5
10
μA
― 0.01 ―
nA
―
50k
―
―
―
10
―
pF
Min Typ. Max Unit
1000 2000 ―
%
500
―
―
%
―
2
―
μA
―
―
1.0
V
0.3
―
1.2
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24
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