TLP781 查看數據表（PDF） - Toshiba

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TLP781

GaAs IRED & Photo−Transistor Photocoupler

Toshiba 

TLP781/TLP781F

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP781, TLP781F

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Signal Transmission Between Different Voltage

Circuits

TLP781

Unit in mm

The TOSHIBA TLP781 consists of a silicone photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a

four lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kVRMS (min)).

• TLP781 : 7.62mm pitch type DIP4

• TLP781F : 10.16mm pitch type DIP4

• Collector-emitter voltage: 80V (min.)

• Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

• Isolation voltage: 5000Vrms (min.)

• UL recognized: UL1577, file No. E67349

• BSI approved: BS EN60065:2002

Approved no.8961

BS EN60950-1:2006

Approved no.8962

• SEMKO approval: EN60950-1,EN60065 under plan

• Option(D4)type

VDE approved : DIN EN60747-5-2

Certificate No. 40021173

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option (D4)”

• Construction mechanical rating

7.62mm Pitch

Standard Type

Creepage distance

6.5mm(min)

Clearance

6.5mm(min)

Insulation thickness

0.4mm(min)

10.16mm Pitch

TLPxxxF Type

8.0mm(min)

8.0mm(min)

0.4mm(min)

1

TOSHIBA

Weight: 0.25g (typ.)

TLP781F

Unit in mm

TOSHIBA

Weight: 0.25g (typ.)

Pin Configurations

(top view)

1

4

2

3

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

2007-12-05

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