TN0110N3-GP013 查看數據表（PDF） - Supertex Inc
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TN0110N3-GP013 Datasheet PDF : 5 Pages
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TN0110
Thermal Characteristics
Package
ID
(continuous)†
TO-92
350mA
Notes:
† ID (continuous) is limited by max rated Tj .
ID
(pulsed)
2.0A
Power Dissipation
@TC = 25OC
1.0W
IDR†
350mA
IDRM
2.0A
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
100 -
-
V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
0.6 -
2.0
V VGS = VDS, ID= 0.5mA
ΔVGS(th) Change in VGS(th) with temperature
-
-3.2 -5.0 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage
-
-
100
nA VGS = ± 20V, VDS = 0V
IDSS Zero Gate voltage drain current
-
-
10
µA VGS = 0V, VDS = Max Rating
-
-
500
µA
VGS = 0V, VDS = 0.8 Max Rat-
ing, TA = 125°C
ID(ON) ON-state drain current
0.75 1.4
-
2.0 3.4
-
A
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance
- 2.0 4.5
- 1.6 3.0
Ω
VGS = 4.5V, ID = 250mA
VGS = 10V, ID = 500mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
0.6 1.1 %/OC VGS = 10V, ID = 500mA
GFS Forward transductance
225 400
- mmho VDS = 25V, ID = 500mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 50 60
VGS = 0V,
-
25 35
pF VDS = 25V,
- 4.0 8.0
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 2.0 5.0
-
-
-
3.0 5.0
6.0 7.0
3.0 6.0
VDD = 25V,
ns ID = 1.0A,
RGEN = 25Ω
VSD Diode forward voltage drop
1.0 1.5
V VGS = 0V, ISD = 500mA
trr
Reverse recovery time
- 400 -
ns VGS = 0V, ISD = 500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
10%
0V
t(ON)
t(OFF)
td(ON)
tr
td(OFF)
tf
VDD
OUTPUT
0V
10%
90%
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Doc.# DSFP-TN0110
C080813
Supertex inc.
2
www.supertex.com
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