TN805-X00H 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
TN805-X00H Datasheet PDF : 10 Pages
| |||
TN8, TS8 and TYNx08 Series
Figure 9: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical
values) for TS8 series
dV/dt[RGK] / dV/dt[RGK=220Ω]
10.00
Tj = 125°C
VD = 0.67 x VDRM
1.00
0.10
0.01
0
RGK(kΩ)
200 400 600 800 1000 1200 1400 1600 1800 2000
Figure 10: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values) for TS8 series
dV/dt[CGK] / dV/dt[RGK=220Ω]
15.0
12.5
10.0
VD = 0.67 x VDRM
Tj = 125°C
RGK = 220Ω
7.5
5.0
2.5
CGK(nF)
0.0
0 20 40 60 80 100 120 140 160 180 200 220
Figure 11: Surge peak on-state current versus
number of cycles
Figure 12: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
ITSM(A)
100
90
80
70
60
TN8 / TS8
50
40
30
20
10
0
1
TYN08
Non repetitive
Tj initial=25°C
Repetitive
TC=110°C
Number of cycles
10
100
tp=10ms
One cycle
1000
ITSM(A), I2t (A2s)
1000
100
dI/dt limitation
10
0.01
0.10
Tj initial = 25°C
ITSM
TYN08
TN8 / TS8
I2t
tp(ms)
1.00
TYN08
TN8 / TS8
10.00
Figure 13: On-state characteristics (maximum
values)
50.0
10.0
ITM(A)
Tj max.:
Vt0=0.85V
Rd=46mΩ
Tj=max
1.0
Tj=25°C
VTM(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 14: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed circuit board FR4, copper
thickness: 35µm) (DPAK)
Rth(j-a)(°C/W)
100
80
60
40
20
S(cm²)
0
0
2
4
6
8 10 12 14 16 18 20
5/10
Share Link: 