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TN2524 查看數據表(PDF) - Supertex Inc

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TN2524 Datasheet PDF : 5 Pages
1 2 3 4 5
TN2524
Thermal Characteristics
Package
ID
(continuous)*
ID
(pulsed)
Power Dissipation
@T = 25OC
θjc
θja
IDR*
IDRM
(A)
(A)
A
(W)
(OC/W)
(OC/W)
(A)
(A)
TO-243AA (SOT-89)
0.36
2.0
1.6(†)
15
78(†)
0.36
2.0
Notes:
* I (continuous) is limited by max rated T .
† MDounted on FR5 board, 25mm x 25mm jx 1.57mm.
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
240 -
-
V VGS = 0V, ID = 2.0mA
VGS(th) Gate threshold voltage
0.6 -
2.0
V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
-
-
-5.0 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage
-
-
100
nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
10
µA VGS = 0V, VDS = Max Rating
-
-
1.0
mA
VGS = 0V, VDS = 0.8 Max Rat-
ing, TA = 125°C
I
ON-state drain current
D(ON)
0.5 1.9 -
1.0 2.8 -
A
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source ON-state resistance
- 4.0 6.0
- 4.0 6.0
Ω
VGS = 4.5V, ID = 250mA
VGS = 10, ID = 0.5A
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.4 %/OC VGS = 10V, ID = 0.5A
GFS Forward transductance
300 600
- mmho VDS = 25V, ID = 0.5A
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 65 125
VGS = 0V,
-
35 70
pF VDS = 25V,
- 10 25
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
-
10
-
-
-
-
-
-
10
20
20
VDD = 25V,
ns ID = 1.0A,
RGEN = 25Ω
VSD Diode forward voltage drop
-
-
1.8
V VGS = 0V, ISD = 1.0A
trr
Reverse recovery time
- 300 -
ns VGS = 0V, ISD = 1.0A
Notes:
(1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
(2) All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V 10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
2

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