TN6725A 查看數據表（PDF） - Fairchild Semiconductor
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TN6725A Datasheet PDF : 3 Pages
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NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCES Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1 mA
IC = 100 µA
IE = 10 µA
VCB = 40 V
VEB = 10 V
50
V
60
V
12
V
100 nA
100 nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 200 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
IC = 1A, VCE = 5 V
IC = 200 mA, IB = 2 mA
IC = 1 A, IB = 2 mA
IC = 1 A, IB = 2 mA
IC = 1 A, VCE = 5.0 V
25,000
-
15,000
4000 40,000
1.0
V
1.5
2
V
2
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Output Capacitance
hfe
Small Signal Current Gain
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
VCB = 10 V, IE = 0, f = 1MHz
IC = 200 mA,VCE = 5 V, f=100MHz 1
10
pF
10
-
© 1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
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