TPV596 查看數據表（PDF） - Motorola => Freescale
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TPV596 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and
500 mW Band V TV transposer stages. Gold metallization and diffused emitter
ballast resistors are used to enhanced reliability, ruggedness and linearity.
• Band IV and V (470– 860 MHz)
• 0.5 W — Pref @ – 58 dB IMD
• High Gain — 12 dB Typ, Class A, f = 860 MHz
• Gold Metallization for Reliability
Order this document
by TPV596A/D
TPV596A
0.5 W, 470 – 860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 4.0 mA, IC = 0)
Emitter–Base Leakage Current
(VEB = 2.0 V)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mA, RBE = 10 Ω)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Value
24
45
3.5
0.7
8.75
0.05
200
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Symbol
RθJC
Symbol
Min
V(BR)CEO
24
V(BR)CBO
45
V(BR)EBO
3.5
IEBO
—
ICBO
—
V(BR)CER
50
hFE
15
Cob
—
CASE 244–04, STYLE 1
(.280 SOE)
Max
20
Typ
Max
—
—
—
—
—
—
—
0.25
—
1.0
—
—
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
mAdc
Vdc
—
120
—
—
5.0
pF
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TPV596A
1
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