DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

S339C 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
S339C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Absolute Maximum Ratings
1 Absolute Maximum Ratings
TS339
Table 1. Key parameters and their absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC+
Supply Voltage (1)
18
V
Vid
Differential Input Voltage (2)
±18
V
Vi
Input Voltage (3)
18
V
Vo
Output Voltage
18
V
Io
Output Current
20
mA
IF
Forward Current in ESD Protection Diodes on Inputs (4)
50
mA
Power Dissipation (5) DIP14
pd
SO14
TSSOP14
1500
830
mW
710
Tstg
Storage Temperature Range
-65 to +150
°C
HBM: Human Body Model(6)
50
V
ESD
MM: Machine Model(7)
40
V
CDM: Charged Device Model
800
V
1. All voltage values, except differential voltage, are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. Excursions of input voltages may exceed the power supply level. As long as the common mode voltage
[Vicm=(Vin+ + Vin-)/2] remains within the specified range, the comparator will provide a stable output state.
However, the maximum current through the ESD diodes (IF) of the input stage must strictly be observed.
4. Guaranteed by design.
5. Pd is calculated with Tamb = +25°C, Tj = +150°C and
Rthja = 80 °C/W for DIP14 package
Rthja = 150 °C/W for SO14 package
Rthja = 175°C/W for TSSOP14 package
6. Human body model, 100pF discharged through a 1.5kresistor into pin of device.
7. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5), into pin to pin of device.
2/9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]