TS514AID 查看數據表（PDF） - STMicroelectronics
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TS514AID Datasheet PDF : 10 Pages
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Electrical Characteristics
3 Electrical Characteristics
TS514 / TS514A
Table 3.
Symbol
VCC = ±15V, Tamb = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Icc Supply Current
Input Bias Current
Iib – at 25°C
– at Tmin ≤Top ≤Tmax
Ri Input Resistance, f = 1kHz
Input Offset Voltage
– at 25°C:
TS514
Vio
TS514A
– at Tmin ≤Top ≤Tmax
TS514
TS514A
∆Vio Input Offset Voltage Drift at Tmin ≤Top ≤Tmax
Input Offset Current
Iio
at 25°C
at Tmin ≤Top ≤Tmax
1.4 2.4
50 150
300
1
0.5 2.5
0.5
4
1.5
5
5
20
40
∆Iio
Input Offset Current Drift
Tmin ≤Top ≤Tmax
0.08
Ios Output Short Circuit Current
Large Signal Voltage Gain, RL = 2kΩ
Avd
Vcc = ±15V
Vcc = ± 4V
GBP Gain-bandwidth Product, f = 100kHz
Equivalent Input Noise Voltage, f = 1kHz
en
Rs = 50Ω
Rs = 1kΩ
Rs = 10kΩ
Total Harmonic Distortion
THD Av = 20dB, RL = 2kΩ, Vo = 2Vpp, f = 1kHz
±Vopp
Output Voltage Swing, RL = 2kΩ
Vcc = ±15V
Vcc = ± 4V
Vopp Large Signal Voltage Swing, RL = 10kΩ, f = 10kHz
SR Slew Rate, unity gain, RL = 2kΩ
CMR Common Mode Rejection Ratio, Vic = 10V
SVR Supply Voltage Rejection Ratio, dVic = 10V, f = 100Hz
Vo1/Vo2 Channel Separation, f = 1kHz
23
90 100
95
1.8 3
8
15
10
18
0.03 0.1
±13
±3
28
0.8 1.5
90
90
120
Unit
mA
nA
MΩ
mV
µV/°C
nA
-n---A---
°C
mA
dB
MHz
---n---V-----
Hz
%
V
Vpp
V/µs
dB
dB
dB
4/10
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