81720-12 查看數據表（PDF） - STMicroelectronics
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81720-12 Datasheet PDF : 4 Pages
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AM81720-012
RF & MICROWAVE TRANSISTORS
COMMUNICATIONS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGIZED VSWR ∞:1
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 12 W MIN. WITH 7.4 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM81720-012
BRANDING
81720-12
DESCRIPTION
The AM81720-012 is designed specifically for Tele-
communications applications.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a refractory/gold metallization system.
The unique AMPAC™ devices are housed in Her-
metic Metal/Ceramic packages with internal
Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
Power Dissipation*
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation
NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
September 1992
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Value
31.8
1.47
24
200
− 65 to +200
5.5
Unit
W
A
V
°C
°C
°C/W
1/4
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