ZDT6757 查看數據表（PDF） - Zetex => Diodes

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ZDT6757

SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS

Zetex => Diodes 

SM-8 COMPLEMENTARY MEDIUM POWER

TRANSISTORS

ISSUE 1 - NOVEMBER 1995

ZDT6757

C1

C1

C2

C2

PARTMARKING DETAIL – T6757

B1

NPN

E1

B2

E2 PNP

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Operating and Storage Temperature Range

VCBO

VCEO

VEBO

ICM

IC

Tj:Tstg

NPN

PNP

300

-300

300

-300

5

-5

1

-1

0.5

-0.5

-55 to +150

UNIT

V

V

V

A

A

°C

THERMAL CHARACTERISTICS

PARAMETER

Total Power Dissipation at Tamb = 25°C*

Any single die “on”

Both die “on” equally

Derate above 25°C*

Any single die “on”

Both die “on” equally

SYMBOL

Ptot

VALUE

2.25

2.75

18

22

UNIT

W

W

mW/ °C

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

°C/ W

45.5

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

3 - 378

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