ZDT6757 查看數據表（PDF） - Zetex => Diodes

零件编号

产品描述 (功能)

生产厂家

ZDT6757

SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS

Zetex => Diodes 

ZDT6757

NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO 300

V

IC=100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO 300

V

IC=10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5

V

IE=100µA, IC=0

Collector Cutoff

ICBO

Current

100 nA

VCB=200V, IE=0

Emitter Cutoff Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

100 nA

0.5 V

VEB=3V, IC=0

IC=100mA, IB=10mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1

V

IC=100mA, IB=10mA*

Base-Emitter Turn-On VBE(on)

Voltage

1

V

IC=100mA, VCE=5V*

Static Forward

hFE

50

Current Transfer Ratio

40

Transition

Frequency

fT

30

MHz

IC=100mA, VCE=5V

IC=10mA, VCE=5V

IC=10mA, VCE=20V

f=20MHz

Output Capacitance Cobo

20

pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FZT657 datasheet.

VCB=20V, f=1MHz

3 - 379

Share Link: