BD787G(2013) 查看數據表（PDF） - ON Semiconductor
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BD787G Datasheet PDF : 6 Pages
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BD787G (NPN), BD788G (PNP)
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
VCEO(sus)
60
ICEO
−
ICEX
−
−
IEBO
−
Vdc
−
100
mAdc
1.0
mAdc
0.1
mAdc
mAdc
1.0
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 200 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 4.0 Adc, IB = 800 mAdc)
Base−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
hFE
−
40
250
25
−
20
−
5.0
−
VCE(sat)
−
−
−
−
Vdc
0.4
0.6
0.8
2.5
VBE(sat)
−
Vdc
2.0
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
Vdc
1.8
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
MHz
50
−
Output Capacitance
(VCB = 10 Vdc, IC = 0)
BD787G
(f = 0.1 MHz)
BD788G
Cob
−
−
pF
50
70
Small−Signal Current Gain
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
10
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data
1. Pulse Test; Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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