BD787G(2013) 查看數據表（PDF） - ON Semiconductor
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BD787G Datasheet PDF : 6 Pages
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BD787G (NPN), BD788G (PNP)
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
20 40
0
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
25 ms
+ 11 V
0
- 9.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
+ 30 V
500
VCC
300
RC
200
RB
51
D1
-4V
SCOPE
100
tr
70
50
30
20 td @ VBE(off) = 5.0 V
VCC = 30 V
IC/IB = 10
TJ = 25°C
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
10
7.0
5.0
0.04 0.06
BD787 (NPN)
BD788 (PNP)
0.1
0.2
0.4 0.6 1.0
2.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.02
0.03
0.01
0.02
0 (SINGLE PULSE)
0.01
0.02
0.05
0.1
0.2
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
RqJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100 200
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