MJD44H11(2011) 查看數據表（PDF） - ON Semiconductor
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MJD44H11 Datasheet PDF : 8 Pages
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MJD44H11 (NPN) MJD45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
MJD44H11
MJD45H11
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJD44H11
MJD45H11
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11
MJD45H11
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc
MJD44H11
MJD45H11
Symbol
Min Typ Max Unit
VCEO(sus)
80
ICES
IEBO
Vdc
1.0
mA
1.0
mA
VCE(sat)
VBE(sat)
hFE
60
40
1
Vdc
1.5 Vdc
−
Ccb
fT
td + tr
ts
tf
pF
45
130
MHz
85
90
ns
300
135
ns
500
500
ns
140
100
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