MJD44H11(2011) 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

MJD44H11
(Rev.:2011)

Complementary Power Transistors

ON Semiconductor 

MJD44H11 (NPN) MJD45H11 (PNP)

1

0.7 D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1 0.05

0.07

0.05 0.02

0.03

0.01

0.02 SINGLE PULSE

0.01

0.01 0.02 0.03 0.05 0.1

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2 0.3 0.5 1

2 3 5 10 20 30 50

t, TIME (ms)

Figure 1. Thermal Response

100 200 300 500 1 k

20

10

5

3

2

1

0.5

0.3

0.1

0.05

0.02

1

100 ms

500 ms

dc 5 ms

1 ms

THERMAL LIMIT @ TC = 25°C

WIRE BOND LIMIT

3 5 7 10

20 30 50 70 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

TA TC

2.5 25

2 20

TC

1.5 15

1 10

0.5 5

TA

SURFACE

MOUNT

00

25

50

75

100

125

150

T, TEMPERATURE (°C)

Figure 3. Power Derating

http://onsemi.com

3

Share Link: