MJD44H11(2011) 查看數據表（PDF） - ON Semiconductor

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MJD44H11
(Rev.:2011)

Complementary Power Transistors

ON Semiconductor 

MJD44H11 (NPN) MJD45H11 (PNP)

1.2

IC/IB = 10

1.1

1

0.9

-40°C

0.8

0.7

25°C

0.6

150°C

0.5

0.4

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 10. MJD44H11 Saturation Voltage

VBE(sat)

1.2

IC/IB = 10

1.1

1

0.9

-40°C

0.8

0.7

25°C

0.6

150°C

0.5

0.4

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 11. MJD45H11 Saturation Voltage

VBE(sat)

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5

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