SGSD200 查看數據表（PDF） - STMicroelectronics

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SGSD200

Complementary power Darlington transistors

STMicroelectronics 

Electrical characteristics

SGSD100 SGSD200

Symbol

Parameter

Test conditions

Min.

Es/b

Second breakdown energy

VCC = 30 V L = 3 mH

250

VCC = 30 V L = 3 mH TC = 100 oC 250

Is/b Second breakdown current VCE = 25 V t = 500 ms

6

1. Pulsed : Pulse duration = 300 µs, duty cycle ≤1.5%

Note:

For PNP type voltage and current values are negative

Typ.

Max. Unit

mJ

mJ

A

4/10

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