TSFF5210(2006) 查看數據表（PDF） - Vishay Semiconductors
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TSFF5210
(Rev.:2006)
(Rev.:2006)
Vishay Semiconductors
TSFF5210 Datasheet PDF : 6 Pages
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TSFF5210
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Temp. coefficient of VF
Reverse current
Junction capacitance
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
Symbol
Min
VF
VF
TKVF
IR
Cj
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
90
IF = 1 A, tp = 100 µs
Ie
Radiant power
IF = 100 mA, tp = 20 ms
φe
Temp. coefficient of φe
IF = 100 mA
TKφe
Angle of half intensity
ϕ
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth
IF = 100 mA
Δλ
Temp. coefficient of λp
IF = 100 mA
TKλp
Rise time
IF = 100 mA
tr
Fall time
IF = 100 mA
tf
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
Virtual source diameter
∅
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Typ.
1.5
2.3
- 2.1
125
Typ.
180
1800
50
- 0.35
± 10
870
40
0.25
15
15
23
3.7
Max
Unit
1.8
V
3.0
V
mV/K
10
µA
pF
Max
Unit
450
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
300
250
200
150
R
thJA
100
50
0
0
16647
10 20 30 40 50 60 70 80 90 100
T - Ambient Temperature (°C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
200
175
150
125
100
75
R
thJA
50
25
0
0 10 20 30 40 50 60 70 80 90 100
16964
T - Ambient Temperature (°C)
amb
Figure 2. Forward Current vs. Ambient Temperature
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2
Document Number 81090
Rev. 1.5, 28-Nov-06
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