TSFF5210(2006) 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

TSFF5210
(Rev.:2006)

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Vishay Semiconductors 

TSFF5210

Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm,

GaAlAs Double Hetero

Description

TSFF5210 is a high speed infrared emitting diode in

GaAlAs on GaAlAs double hetero (DH) technology,

molded in a clear, untinted plastic package.

DH technology combines high speed with high radiant

power at wavelength of 870 nm.

94 8390

Features

• High modulation bandwidth (23 MHz)

• Extra high radiant power and radiant

intensity

• Low forward voltage

e2

• Suitable for high pulse current operation

• Standard T-1¾ (∅ 5 mm) package

• Angle of half intensity ϕ = ± 10°

• Peak wavelength λp = 870 nm

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

• Infrared video data transmission between Cam-

corder and TV set.

• Free air data transmission systems with high

modulation frequencies or high data transmission

rate requirements.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

VR

5

V

Forward current

IF

100

mA

Peak forward current

tp/T = 0.5, tp = 100 µs

IFM

200

mA

Surge forward current

tp = 100 µs

IFSM

1

A

Power dissipation

PV

250

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

- 40 to + 85

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

t ≤ 5 sec, 2 mm from case

Tsd

260

°C

Thermal resistance junction/

ambient

RthJA

300

K/W

Document Number 81090

Rev. 1.5, 28-Nov-06

www.vishay.com

1

Share Link: