TSFF5210 查看數據表（PDF） - Vishay Semiconductors
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TSFF5210 Datasheet PDF : 5 Pages
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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TSFF5210
Vishay Semiconductors
1000
tp/T = 0.01 Tamb < 50 °C
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1
10
100
16031
tp - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
tp = 100 µs
tp/T = 0.001
10
1
0
1
2
3
4
18873
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
1000
100
10
1
0.1
1
16032
10
100
1000
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
780
95 9886
880
980
λ - Wavelength (nm)
Fig. 6 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.6 0.4 0.2 0
15989
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1
0
-1
-2
-3
IFDC = 70 mA
- 4 IFAC = 30 mA pp
-5
101
102
103
104
105
14256
f - Frequency (kHz)
Fig. 8 - Attenuation vs. Frequency
Rev. 1.8, 24-Aug-11
3
Document Number: 81090
For technical questions, contact: emittertechsupport@vishay.com
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