TSH690 查看數據表（PDF） - STMicroelectronics

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TSH690

40MHz to 1GHz AMPLIFIER

STMicroelectronics 

TSH690

ELECTRICAL CHARACTERISTICS AT 450 MHz

Tamb = 25°C, VCC & Vbias = +2.7V, ZL = 50Ω, f = 450 MHz (unless otherwise specified)

Parameter1)

Min.

Typ.

Max.

Power gain S21 (Pin = -20dBm)

20

23

30

Output Power 1dB Compression

8

12

3rd Order Intercept Point (f = 430MHz)

16

22

Reverse Isolation S12 (f = 400MHz)

-46

Input Return Loss S11

-10

-15

Noise Figure

4.5

1. All min. and max. parameters of this table are garanteed by correlation with 900 MHz tests.

ELECTRICAL CHARACTERISTICS AT 900 MHz

Tamb = 25°C, VCC & Vbias = +3V, ZL = 50Ω, f = 900 MHz (unless otherwise specified)

Parameter1)

Min.

Typ.

Power gain S21 (Pin = -20dBm)

Output Power at 1dB compression point

Output power, Pin = -7 dBm

3rd Order Intercept Point

Reverse Isolation S12

Input Return Loss S11

Output Return Loss S22

Noise figure

1. All min. and max. parameters of this table are garanteed by test.

19

21

+12 +14.3

+10 +11.7

+25

-35

-14

-4.5

5.4

Max.

Unit

dB

dBm

dBm

dB

dB

dB

Unit

dB

dBm

dBm

dBm

dB

dB

dB

dB

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