TSM2N70CPRO 查看數據表（PDF） - TSC Corporation

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TSM2N70CPRO

700V N-Channel Power MOSFET

TSC Corporation 

TO-220

TO-251

(IPAK)

TSM2N70

700V N-Channel Power MOSFET

TO-252

(DPAK)

Pin Definition:

1. Gate

2. Drain

3. Source

PRODUCT SUMMARY

VDS (V)

RDS(on)(Ω)

700

6.5 @ VGS =10V

ID (A)

1

General Description

The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp

ballast based on half bridge.

Features

Block Diagram

● Low RDS(ON) 6.5Ω (Max.)

● Low gate charge typical @ 9.5nC (Typ.)

● Low Crss typical @ 4.5pF (Typ.)

● Fast Switching

Ordering Information

Part No.

TSM2N70CZ C0

TSM2N70CH C5

TSM2N70CH C5G

TSM2N70CP RO

TSM2N70CP ROG

Package

TO-220

TO-251

TO-251

TO-252

TO-252

Packing

50pcs / Tube

70pcs / Tube

70pcs / Tube

2.5Kpcs / 13” Reel

2.5Kpcs / 13” Reel

Note: “G” denote for Halogen Free Product

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current *

Repetitive avalanche Current

Single Pulse Avalanche Energy (Note 2)

Maximum Power Dissipation @TC = 25oC

Operating Junction Temperature

Storage Temperature Range

VDS

VGS

ID

IDM

IAR

EAS

PTOT

TJ

TSTG

* Limited by maximum junction temperature

Thermal Performance

Parameter

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

Notes: Surface mounted on FR4 board t ≤ 10sec

Symbol

RӨJC

RӨJA

Limit

700

±30

2

8

2

110

45

150

-55 to +150

Unit

V

V

A

A

A

mJ

W

ºC

oC

Limit

2.78

100

Unit

oC/W

oC/W

1/10

Version: B11

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