TSM2N70CPROG 查看數據表（PDF） - TSC Corporation
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TSM2N70CPROG Datasheet PDF : 10 Pages
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TSM2N70
700V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VGS = 0V, ID = 1mA
VGS = 10V, ID = 1A
VDS = VGS, ID = 50uA
VDS = 700V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 15V, ID = 0.8A
IS = 1.6A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
700
--
2
--
--
--
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VDS = 480V, ID = 2A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
--
Qgs
--
Qgd
--
Ciss
--
Coss
--
Crss
--
Turn-On Delay Time
td(on)
--
Turn-On Rise Time
VGS = 10V, ID = 0.8A,
tr
--
Turn-Off Delay Time
VDD = 350V, RG = 4.7Ω
td(off)
--
Turn-Off Fall Time
tf
--
Reverse Recovery Time
VGS = 0V, IS = 1.3A,
tfr
--
Reverse Recovery Charge
VDD = 25V
Qfr
--
Reverse Recovery Current
dIF/dt = 100A/us
IRRM
--
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=2A, L=56mH, RG=25Ω
3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5%
4. Essentially Independent of Operating Temperature
5. For design reference only, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
Typ Max
--
--
5.25 6.5
--
4
--
1
--
±100
1.7
--
--
1.6
9.5
13
1.6
--
4.0
--
320
--
35
--
4.5
--
18.4
--
35
--
32
--
34
--
474.2 --
2067.8 --
5.16
--
Unit
V
Ω
V
uA
nA
S
V
nC
pF
nS
nS
uC
A
2/10
Version: B11
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