TYNX25 查看數據表（PDF） - STMicroelectronics
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TYNX25 Datasheet PDF : 7 Pages
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TN25 and TYNx25 Series
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
P(W)
24
22 α = 180°
20
18
16
14
12
10
8
6
4
2
0
024
360°
IT(av)(A)
α
6 8 10 12 14 16
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm² (for D²PAK).
IT(av)(A)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
25
D.C.
α = 180°
Tcase( °C)
50
75
100
125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(av)(A)
4.0
3.5
3.0
D.C.
2.5
α = 180°
2.0
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50
75
100
125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
K = [Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
ITSM(A)
350
300
250
200
Non repetitiv e
Tj initial = 25 °C
150
100
Repetitiv e
Tcase = 100 °C
50
Number of cycles
0
1
10
100
tp = 10ms
One cycle
1000
4/7
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