TYN0510 查看數據表（PDF） - STMicroelectronics
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TYN0510 Datasheet PDF : 5 Pages
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Fig.1 : Maximum average power dissipation versus
average on-state current.
P (W)
12
360 O
10
8
6
4
2
0
012
DC
= 180o
= 120o
= 90 o
= 60o
= 30o
IT(AV)(A)
3456789
TYN 0510 ---> TYN 1010
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
P (W)
12
10
8
Tcase (oC)
Rth = 0 o C/W
2o C/W
4o C/W -100
6o C/W
-105
6
= 180o
4
-110
-115
2
-120
Tamb (oC)
0
-125
0 20 40 60 80 100 120 140
Fig.3 : Average on-state current versus case
temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
I T(AV) (A)
12
DC
10
8
6
= 180o
4
2
Tcase (oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current versus
junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
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