UAA3592HN 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
UAA3592HN
Philips Electronics
UAA3592HN Datasheet PDF : 12 Pages
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Philips Semiconductors
Wideband code division multiple access
frequency division duplex power amplifier
Objective specification
UAA3592
DC CHARACTERISTICS
VC1 = 3.6 V; Vreg = 2.7 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VC1
Vreg
IC1(q)
supply voltage for the
first stage collector
regulated supply
voltage
quiescent supply
current
Ileak
leakage current
Inputs EN and ICTL
pin ICTL is LOW
pin ICTL is HIGH
VC1 = 4.5 V; pin EN is LOW
VIL
LOW-level input voltage
VIH
HIGH-level input
voltage
MIN.
3.25
2.6
−
−
−
−
1.5
TYP.
3.6
2.7
−
−
−
−
−
MAX.
UNIT
4.5
V
3
V
50
mA
25
mA
5
µA
1.1
V
−
V
AC CHARACTERISTICS
VC1 = 3.6 V; Vreg = 2.7 V; Tamb = 25 °C; fRF = 1920 to 1980 MHz; Pi adjusted for Po = 24.5 dBm; Rext = 2.2 kΩ;
measured and guaranteed on Philips evaluation board; unless otherwise specified.
SYMBOL
Pi
Po(max)
η
No(RX)
H2
H3
CPR(adj)
CPR(alt)
RLi
G(ripple)
∆G
PARAMETER
CONDITIONS
MIN.
input power
maximum output power
efficiency
Tamb = −30 to +70 °C
Tamb = −30 to +70 °C;
VC1 = 3.25 V
−6
22.5
30
output noise in RX
at 190 MHz offset;
−
band
fRF = 2110 to 2170 MHz
second-harmonic level
−
third-harmonic level
−
adjacent channel power B = 3.84 MHz; at 5 MHz from −
ratio
carrier frequency
first alternate channel B = 3.84 MHz; at 10 MHz
−
power ratio
from carrier frequency
input return loss
ripple gain
gain variation
Tamb = −30 to +70 °C;
−
fRF = 1.5 to 2.5 GHz
∆fRF = 5 MHz;
−
fRF = 1920 to 1980 MHz
Po up to 24.5 dBm; pin ICTL −
is LOW
TYP.
−
−
−
−
−
−
−
−
−
−
−
MAX.
0
−
UNIT
dBm
dBm
−
−135
%
dBm/Hz
−40
dBc
−45
dBc
−37
dBc
−47
dBc
−6
dB
0.5
dB
tbf
dB
2002 Jul 02
6
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