1N5059 查看數據表（PDF） - Philips Electronics
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1N5059 Datasheet PDF : 7 Pages
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Philips Semiconductors
Controlled avalanche rectifiers
Product specification
1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
Cd
forward voltage
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
reverse avalanche
breakdown voltage
IR = 0.1 mA
1N5059
1N5060
1N5061
1N5062
reverse current
VR = VRRMmax; see Fig.7
VR = VRRMmax; Tj = 165 °C; see Fig.7
reverse recovery time when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
diode capacitance VR = 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
225
450
650
900
−
−
−
−
TYP.
−
−
MAX.
0.8
1.0
UNIT
V
V
−
−V
−
−V
−
−V
−
−V
−
1 µA
−
150 µA
3
− µs
50
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46 K/W
100 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 19
3
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