CS62LS4008FC 查看數據表（PDF） - Unspecified
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CS62LS4008FC Datasheet PDF : 11 Pages
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Low Power CMOS SRAM
512K X 8 Bits
UC62LS4008
-20/-25
DC ELECTRICAL CHARACTERISTICS (TA=0℃ to 70℃)
Symbol
VIL
VIH
IL
IOL
VOL
Comment
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Test Condition
VCC=2.4V
VCC=3.6V
VCC=3.6V VIN=0V to VCC
VCC=3.6V CE\=VIH or OE\=VIH
VIO=0V t VCC
VCC=3.6V, IOL=2mA
MIN.
-0.5
2.0
-
-
-
TYP.(1)
-
-
-
-
-
MAX.
0.8
Vcc-0.2
1
1
0.4
UNITS
V
V
uA
uA
V
VOH
Output High Voltage
VCC=3.0V, IOH=-1mA
2.4
-
-
V
ICC
Operating Power Supply
Current
CE\=VIL,IDQ=0mA, F=Fmax(3)
-
-
20
mA
ISB1
TTL Standby Current
CE\=VIH, VIN=VIH to VIL
-
ISB2
CMOS Standby Current
CE\≧VCC-0.2V, VIN=VCC-0.2V
to 0.2V
-
-
1
mA
2
10
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA=0℃ to 70℃)
Symbol
VDR
ICCDR
tDR
tR
Comment
VCC to Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Test Condition
CE\≧VCC - 0.2V
VIN≧VCC-0.2V or VIN≦0.2V
CE\≧VCC - 0.2V
VIN≧VCC-0.2V or VIN≦0.2V
See Retention Waveform
MIN.
1.2
-
0
TRC(2)
TYP.(1)
-
0.1
-
-
1. VCC = 1.5V, TA = 25℃.
2. tRC = Read Cycle Time
MAX.
-
1
-
-
UNITS
V
uA
ns
ns
LOW VCC DATA RETENTION WAVEFORM(1) (CE\ Controlled)
Vcc
CE
Data Retention Mode
tCDR
VDR >= 1. 2V
tR
VIH
CE >= VCC - 0. 2V
VIH
U-Chip Technology Corp. LTD. .
Reserves the right to modify document contents without notice.
Preliminary Rev.1.0
PAGE 3
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