UF2815B 查看數據表（PDF） - M/A-COM Technology Solutions, Inc.
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UF2815B Datasheet PDF : 4 Pages
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UF2815B
RF Power MOSFET Transistor
15W, 100-500 MHz, 28V
Features
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
RoHS Compliant
100 MHz to 500 MHz operation
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
Power Dissipation
PD
4.2
A
48.6
W
Junction Temperature
Storage Temperature
Thermal Resistance
TJ
TSTG
θJC
200
-55 to 150
3.6
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
100
6.4-j25.0
300
6.5-j12.0
ZLOAD (Ω)
22.0+j16.0
15.0+j14.0
500
1.7-j10.5
8.0=j10.5
VDD=28V, IDQ=150 mA, POUT =15.0 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
65
-
-
3.0
Gate-Source Leakage Current
IGSS
-
3.0
Gate Threshold Voltage
VGS(TH)
2.0
6.0
Forward Transconductance
GM
.240 -
Input Capacitance
CISS
-
21
Output Capacitance
Reverse Capacitance
COSS
CRSS
-
15
-
7.2
Power Gain
Drain Efficiency
Load Mismatch Tolerance
GP
10
-
ŋD
50
-
VSWR-T - 20:1
Package Outline
Rev. V1
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
MILLIMETERS
MIN
MAX
20.70
20.96
14.35
14.61
14.73
15.24
6.27
6.53
6.22
6.48
1.14
1.40
1.52
1.78
2.92
3.17
1.40
1.65
2.03
2.39
3.66
4.32
.10
.15
INCHES
MIN MAX
.815 .825
.565 .575
.580 .575
.247 .257
.245 .255
.045 .055
.060 .070
.115 .125
.055 .065
.080 .094
.144 .170
.004 .006
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
VGS = 0.0 V , IDS = 6.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 30.0 mA
VDS = 10.0 V , IDS 300.0 mA , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz
VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz
VDD = 28.0 V, IDQ = 150.0 mA, POUT = 15.0 W F =500 MHz
1
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