IMB10A(2008) 查看數據表（PDF） - ROHM Semiconductor
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IMB10A Datasheet PDF : 3 Pages
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Transistors
General purpose
(dual digital transistors)
EMB10 / UMB10N / IMB10A
EMB10 / UMB10N / IMB10A
zFeatures
1) Two DTA123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr1 and
DTr2.
zEquivalent circuit
EMB10 / UMB10N
(3) (2) (1)
R1 R2
R1=2.2kΩ DTr2
DTr1
R2=47kΩ
R2 R1
(4) (5) (6)
IMB10A
(4) (5) (6)
R1 R2
DTr2
DTr1
R1=2.2kΩ
R2 R1
R2=47kΩ
(3) (2) (1)
zDimensions (Unit : mm)
EMB10
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : B10
UMB10N
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88 Abbreviated symbol : B10
IMB10A
(4) (5) (6)
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Supply voltage
VCC
−50
Input voltage
−12
VIN
5
Output current
IO
IC (Max.)
−100
−100
Power EMB10, UMB10N
dissipation IMB10A
Pd
150 (TOTAL)
300 (TOTAL)
Junction temperature
Tj
150
Storage temperature
Tstg
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
−55 to +150
Unit
V
V
mA
∗1
mW
∗2
˚C
˚C
(3) (2) (1)
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74 Abbreviated symbol : B10
Rev.C
1/2
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