UPA1701AG-E2 查看數據表（PDF） - NEC => Renesas Technology
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UPA1701AG-E2 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (TA = 25 °C )
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 4.0 V, ID = 3.5 A
RDS(on)2 VGS = 2.5 V, ID = 3.5 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 3.5 A
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
ID = 3.5 A
Rise Time
tr
VGS(on) = 4.0 V
Turn-off Delay Time
td(off)
VDD = 15 V
Fall Time
tf
RG = 10 Ω
Total Gate Charge
QG
ID = 7.0 A
Gate to Source Charge
QGS
VDD = 24 V
Gate to Drain Charge
QGD
VGS = 4.0 V
Body Diode Forward Voltage
VF(S-D) IF = 7.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 7.0 A, VGS = 0 V
Qrr
di/dt = 100 A/ µs
µ PA1701A
MIN. TYP. MAX. UNIT
19 27 mΩ
25 40 mΩ
0.5 0.9 1.5 V
6.0 13
S
10 µA
±10 µA
1040
pF
340
pF
150
pF
25
ns
120
ns
73
ns
77
ns
13.2
nC
1.8
nC
5.8
nC
0.77
V
31
ns
58
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RG
RL
VGS
VGS
Wave Form
10 %
0
90 %
VGS(on)
IG = 2 mA
RL
PG. RG = 10 Ω
VDD
PG.
50 Ω
VDD
ID
90 %
90 %
VGS
0
ID
ID
0 10 %
Wave Form
10 %
τ
td(on)
tr
td(off)
tf
τ = 1µ s
Duty Cycle ≤ 1 %
ton
toff
2
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