UPA1703G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA1703G-E1 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µPA1703
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transis-
tor designed for power management applications of
notebook computers.
PACKAGE DIMENSIONS
(in millimeter)
8
5
FEATURES
• Super Low On-Resistance
RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 17 mΩ MAX. (VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 2180 pF TYP.
• Built-in G-S Protection Diode
• Small and Surface Mount Package
(Power SOP8)
1
4
5.37 MAX.
1, 2, 3 ; Source
4
; Gate
5, 6, 7, 8 ; Drain
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, all terminals are connected)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)Notes1
ID(pulse)
±40
A
Total Power Dissipation (TA = 25 °C)Notes2
Channel Temperature
Storage Temperature
PT
2.0
W
Tch
150
°C
Tstg
−55 to
°C
+150
Gate
Gate
Protection
Diode
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 × 0.7 mm
Drain
Body
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated
voltage may be applied to this device.
Document No. D11494EJ1V0DS00 (1st edition)
Date Published December 1996 N
Printed in Japan
©
1996
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