DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPA1703G 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
UPA1703G
NEC
NEC => Renesas Technology NEC
UPA1703G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
µPA1703
ELECTRICAL CHARACTERISTICS (TA = 25 °C, all terminals are connected)
CHARACTERISTICS
Drain to Source
On-state Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
TEST CONDITIONS
VGS = 10 V, ID = 5.0 A
VGS = 4 V, ID = 5.0 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 5.0 A
VDS = 30 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5.0 A
VGS(on) = 10 V
VDD = 15 V
RG = 10
ID = 10 A
VDD = 24 V
VGS = 10 V
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0
di/dt = 100 A/µs
MIN.
1.0
8.0
TYP.
8.5
12
1.6
18
2180
890
370
25
210
120
75
40
5.6
9.6
0.73
46
45
MAX.
10.5
17
2.0
10
±10
UNIT
m
m
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
D.U.T.
RG
RL
VGS
VGS
Wave Form
10 %
0
90 %
VGS(on)
IG = 2 mA
RL
PG. RG = 10
VDD
PG.
50
VDD
ID
90 %
90 %
VGS
0
ID
ID
0 10 %
Wave Form
10 %
t
td(on)
tr
td(off)
tf
t = 1 µs
Duty Cycle 1 %
ton
toff
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]