UPA1703G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA1703G-E1 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
VGS = 4 V
15
10
10 V
5
0
ID = 5.0 A
–50
0
50 100 150
Tch - Channel Temperature - °C
10 000
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µ s
VGS = 0
100
10
1
0.1
1
10
100
IF - Diode Current - A
µPA1703
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 4 V
Pulsed
VGS = 0
10
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
td(off)
tr
tf
td(on)
VDD = 15 V
VGS(on) = 10 V
1
RG = 10 Ω
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 10 A
14
30
12
10
VDD = 24 V
VGS
20
15 V
8
6V
6
10
4
2
VDS
0
0
10
20
30
40
QG - Gate Charge - nC
5
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