DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
VGS = 2.5 V
10
VGS = 4.0 V
0
ID = 5.0 A
− 50
0
50
100 150
Tch - Channel Temperature - ˚C
10 000
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10 30 100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
ID - Drain Current - A
µ PA1704
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 4.0 V
Pulsed
10
2.5 V
0V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
100
SWITCHING CHARACTERISTICS
tf
tr
td(off)
td(on)
10
1
0.1
VDS = 15 V
VGS = 4.0 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 10 A
30
6
5
VDD = 24 V
VGS
20
15 V
4
6V
3
10
2
1
VDS
0
0
5 10 15 20 25 30 35 40
QG - Gate Charge - nC
Data Sheet D12908EJ1V1DS00
5