UPA1706G-E2 查看數據表（PDF） - NEC => Renesas Technology
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UPA1706G-E2 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1706
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
• Super Low on-resistance
RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A)
RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A)
RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A)
• Low Ciss : Ciss = 3000 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1706G
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
1
4
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage Note1
VDSS
30
V
Gate to Source Voltage Note2
VGSS
±20
V
Drain Current (DC)
ID(DC)
±13
A
Drain Current (pulse) Note3
ID(pulse)
±52
A
Total Power Dissipation (TA = 25°C) Note4
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. VGS = 0 V
2. VDS = 0 V
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
4. Mounted on ceramic substrate of 1200 mm2 x 0.7mm
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. G13083EJ1V0DS00 (1st edition)
Date Published January 1999 NS CP(K)
©
Printed in Japan
1998
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