µ PA1708
5
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a) = 62.5˚C/W
10
1
0.1
0.01
0.001
10 µ
100 µ
1m
10 m 100 m
Mounted on ceramic
substrate of 1200mm2 × 1.7mm
Single Pulse
1
10
100 1000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS =10 V
Pulsed
TA = −50˚C
10
−25˚C
25˚C
1
75˚C
125˚C
150˚C
0.1
1
10
100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
70
Pulsed
60
50
40
30
20
ID = 3.5 A
10
0
5
10
15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
70
60
50
40
VGS = 4.5 V
30
20
10 V
10
0
1
10
100
ID - Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
4
ID = 1 mA
3
2
1
0
-50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet G13603EJ2V0DS