UPA1716G-E2 查看數據表（PDF） - NEC => Renesas Technology
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UPA1716G-E2 Datasheet PDF : 8 Pages
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µ PA1716
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
36
32
VGS = −4 V
28
−4.5 V
24
20
−10 V
16
12
ID = −4 A
8
−50
0
50 100 150
Tch - Channel Temperature - ˚C
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/µ s
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = −4 V
0V
−4.5 V
1
0.1
0
0.5
1.0
1.5
VF - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
1
−0.1
VDS = −15 V
VGS = −10 V
RG = 10Ω
−1
−10
−100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
ID = −8.0 A
VDS = −24 V
−30
−15 V
VGS
−12
−6 V
−10
−20
−8
−6
−10
−4
−2
VDS
0
0 10 20 30 40 50 60 70
QG - Gate Charge - nC
Data Sheet G13727EJ1V0DS00
5
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