UPA1717 查看數據表（PDF） - NEC => Renesas Technology
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UPA1717 Datasheet PDF : 8 Pages
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µ PA1717
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = −10 V, ID = −3 A
26 33 mΩ
RDS(on)2 VGS = −4.5 V, ID = −3 A
44 59 mΩ
Gate to Source Cut-off Voltage
VGS(off) VDS = −10 V, ID = −1 mA
−1.5 −2.0 −2.5 V
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
| yfs |
IDSS
IGSS
Ciss
VDS = −10 V, ID = −3 A
VDS = −30 V, VGS = 0 V
VGS = # 25 V, VDS = 0 V
VDS = −10 V
3.0 7.5
S
−1 µA
# 10 µA
830
pF
Output Capacitance
Coss
VGS = 0 V
330
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
130
pF
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
ID = −3 A
VGS(on) = −10 V
VDD = −15 V
15
ns
120
ns
70
ns
Fall Time
tf
RG = 6 Ω
50
ns
Total Gate Charge
QG
ID = −6 A
15
nC
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VDD = −24 V
VGS = −10 V
3
nC
5
nC
Body Diode Forward Voltage
VF(S-D) IF = 6 A, VGS = 0 V
0.82
V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 6 A, VGS = 0 V
Qrr
di/dt = 100 A / µs
35
ns
15
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1 %
RL
VGS (−)
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID (−)
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G14047EJ1V0DS00
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