UPA1717 查看數據表（PDF） - NEC => Renesas Technology
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UPA1717 Datasheet PDF : 8 Pages
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µ PA1717
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
Pulsed
60
VGS = −4.5 V
40
−10 V
20
ID = −3 A
0 −50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
−0.01
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
−0.1
−1
−10
−100
IF - Diode Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = −4.5 V
10
0V
1
0.1
0.01
0.00
0.50
1.00
VSD - Source to Drain Voltage - V
1.50
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
10
1
−0.1
td(on)
VGS(on) = −10 V
VDD = −15 V
RG = 6 Ω
−1
−10
−100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
ID = −6 A
−30
VDS = −24 V
−15 V
−6 V
−20
−12
VGS
−10
−8
−6
−10
−4
VDS
−2
0
0
5
10
15
20
QG - Gate Charge - nC
Data Sheet G14047EJ1V0DS00
5
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