UPA1726G 查看數據表（PDF） - NEC => Renesas Technology
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UPA1726G Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1726
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1726 is N-Channel MOS Field Effect
Transistor designed for power management
5 applications of notebook computers and so on.
FEATURES
• 2.5-V gate drive and low on-resistance
RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)
5 RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)
5 RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A)
• Low Ciss: Ciss = 2700 pF TYP.
• Built-in G-S protection diodes
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1726G
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
1
4
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC)
ID(DC)
±12
A
Drain Current (pulse) Note1
ID(pulse)
±48
A
Total Power Dissipation (TA = 25°C) Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14050EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
Date Published February 2000 NS CP(K)
Printed in Japan
©
1999, 2000
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